Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions
نویسندگان
چکیده
The dependence of the ramp geometry on highor low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on ReBa2Cu3O7−δ high-Tc superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed.
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تاریخ انتشار 1996